US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Semiconductor devices and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,633, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices and method of forming the same" was invented by Hsiang-Ku Shen (Hsinchu, Taiwan), Liang-Wei Wang (Hsinchu, Taiwan), Dian-Hau Chen (Hsinchu, Taiwan) and Yen-Ming Chen (Hsin-Chu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate structure, a source region and a drain region, a conductive via and an isolation structure. The gate structure is disposed over the substrate. The source region and the drain region aside the gate structure. The conductive via is disposed in t...