US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Semiconductor device including wall fin with dielectric layers disposed between gate-all-around transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,669, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device including wall fin with dielectric layers disposed between gate-all-around transistors" was invented by Shu-Wen Shen (Hsinchu, Taiwan) and Chen-Ping Chen (Toucheng Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a fin structure including a stacked layer of first and second semiconductor layers and a hard mask layer over the stacked layer is formed. A sacrificial cladding layer is formed over at least sidewalls of the exposed hard mask layer and stacked laye...