US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Semiconductor device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,646, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for manufacturing the same" was invented by Jung-Hao Chang (Taichung, Taiwan) and Li-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate structure across a channel region from a top view, the gate structure comprising a work function metal and a gate dielectric layer wrapping around the work function metal, the gate dielectric layer having a U-shaped cross-sectional profile; performing a first plasma etching process, by using a chlorine-containing reactant, on the ga...