US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Self-aligned source/drain metal contact" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,645, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Self-aligned source/drain metal contact" was invented by Pei-Hsun Wang (Kaohsiung, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor fin over a substrate, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, first and second dielectric layers over the substrate, and an S/D contact disposed on the epitaxial S/D feature. The first and s...