US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Select gate spacer formation to facilitate embedding of split gate flash memory" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,673, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Select gate spacer formation to facilitate embedding of split gate flash memory" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chih-Ren Hsieh (Changhua, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a semiconductor substrate having a memory area and a logic area. A memory cell in the memory area includes a select gate separated from a floating gate by a floating gate spacer. A select gate spacer is formed on a side of the select gate opposite the floating gate. The select gate spacer has a uniform t...