ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,865, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Multilayer structure for reducing film roughness in magnetic devices" was invented by Jian Zhu (San Jose, Calif.), Guenole Jan (San Jose, Calif.), Yuan-Jen Lee (Fremont, Calif.), Huanlong Liu (Sunnyvale, Calif.), Ru-Ying Tong (Los Gatos, Calif.), Jodi Mari Iwata (San Carlos, Calif.), Vignesh Sundar (Sunnyvale, Calif.), Luc Thomas (San Jose, Calif.), Yu-Jen Wang (San Jose, Calif.) and Sahil Patel (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm ...