US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Multi-gate device and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,660, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate device and related methods" was invented by Shih-Hao Lin (Hsinchu, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Chih-Hsuan Chen (Hsinchu, Taiwan), Bwo-Ning Chen (Keelung, Taiwan), Cha-Hon Chou (Hsinchu, Taiwan), Hsin-Wen Su (Hsinchu, Taiwan) and Chih-Hsiang Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain fe...