ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,635, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"MRAM reference current" was invented by Chia-Fu Lee (Hsinchu, Taiwan), Hon-Jarn Lin (Hsinchu, Taiwan), Po-Hao Lee (Hsinchu, Taiwan), Ku-Feng Lin (Hsinchu, Taiwan), Yi-Chun Shih (Hsinchu, Taiwan) and Yu-Der Chih (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through ...