US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "MIM efuse memory devices and memory array using a metal-based layer between structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,950, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"MIM efuse memory devices and memory array using a metal-based layer between structures" was invented by Meng-Sheng Chang (Chu-bei, Taiwan) and Chia-En Huang (Xinfeng Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is disclosed. The memory device includes a transistor. The memory device includes a resistor electrically coupled to the transistor, the transistor and the resistor forming an electrical fuse (eFuse) memory cell. The memory device includes a plurality of interconnect structures formed over a source/drain str...