US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Method of writing to or erasing multi-bit memory storage device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,355,026, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of writing to or erasing multi-bit memory storage device" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Martin Liu (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method (of writing to a ferroelectric field-effect transistor (FeFET) configured as a 2-bit storage device that stores two bits, wherein the FeFET includes a first source/drain (S/D) terminal, a second S/D terminal, a gate termina...