US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Method for forming semiconductor device structure with second spacer over second sidewall of fin structure" (Taiwanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,699, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor device structure with second spacer over second sidewall of fin structure" was invented by Szu-Wei Tseng (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a base and a fin structure over the base, and the dielectric layer is over the base and surrounds the fin structure. The method includes forming a gate stack over the fin structure and the die...