US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Method for forming semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,688, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming semiconductor device" was invented by Sheng-Tsung Wang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Chun-Yuan Chen (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Min-Hsuan Lu (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes followings. A transistor is formed, and the transistor is embedded in a dielectric layer and disposed over a semiconductor substrate. A first gate cutting process is performed to for...