US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Method for fabricating a strained structure and structure formed" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,674, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for fabricating a strained structure and structure formed" was invented by Tsung-Lin Lee (Hsinchu, Taiwan), Chih-Hao Chang (Chu-Bei, Taiwan), Chih-Hsin Ko (Fongshan, Taiwan), Feng Yuan (Yonghe, Taiwan) and Jeff J. Xu (Jhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of ...