US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Metallic photoresist patterning and defect improvement" (Taiwanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,353,132, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metallic photoresist patterning and defect improvement" was invented by Chien-Chih Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayer structure for lithography patterning is provided. The multilayer structure includes a substrate, a bottom anti-reflective coating (BARC) layer over the substrate, and a photoresist layer over the BARC layer. The BARC layer includes a polymer and a hydrolysis promoting agent. The photoresist layer includes an organometallic dimer obtained by partial hydrolysis of a precursor organometalli...