US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Memory device sense amplifier control" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,647, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device sense amplifier control" was invented by Chien-Yuan Chen (Hsinchu, Taiwan), Hau-Tai Shieh (Hsinchu, Taiwan) and Cheng Hung Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory bank with a memory cell connected to a local bit line and a word line. A first local data latch is connected to the local bit line and has an enable terminal configured to receive a first local clock signal. A word line latch is configured to latch a word line select signal, and has an enable terminal configured to...