US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Memory device and method for making same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,628, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method for making same" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan) and Tsuching Yang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes transistor structures and memory arc wall structures. The memory arc wall structures are embedded in the transistor structures. The transistor structure includes a dielectric column, a source electrode and a drain electrode, a gate electrode layer...