US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Memory device and formation method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,876, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and formation method thereof" was invented by Chao-I Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a programming method of the memory device are provided. The memory device includes a bottom electrode, a heater, a phase change layer and a top electrode. The heater is disposed on the bottom electrode, and includes heat conducting materials different from one another in terms of electrical resistivity. A first one of the heat conducting materials has a periphery wall portion and a bottom pl...