ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,870, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory device" was invented by Yen-Lin Huang (Menlo Park, Calif.), Ming-Yuan Song (Hsinchu, Taiwan), Chien-Min Lee (Hsinchu County, Taiwan) and Shy-Jay Lin (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes a substrate, a spin-orbit torque layer and a magnetic tunneling junction (MTJ). The MTJ stacks with the spin-orbit torque layer over the substrate and includes a synthetic free layer, a barrier layer and a reference layer. The synthetic free layer includes a synthetic ant...