ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,601, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory cell design" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices are provided. A memory device according to the present disclosure includes a first pull-down device (PD-1), a second pull-down device (PD-2), a first pass-gate device (PG-1), and a second pass-gate device (PG-2) disposed in a first p-well on a substrate, and a first pull-up device (PU-1), a second pull-up device (PU-2), a first isolation device (IS-1), and a second isolation device (IS-2) disposed in an n-well a...