US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Magnetic device and magnetic random access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,868, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetic device and magnetic random access memory" was invented by MingYuan Song (Hsinchu, Taiwan), Shy-Jay Lin (Hsinchu, Taiwan), William J. Gallagher (Hsinchu, Taiwan) and Hiroki Noguchi (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a select...