US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,710, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors" was invented by Kun-Yu Lin (Hsinchu, Taiwan), En-Ping Lin (Hsinchu, Taiwan), Yu-Ling Ko (Hsinchu, Taiwan) and Chih-Teng Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a substrate having a first semiconductor material; creating a mask that covers an nFET region of the substrate; etching a pFET region of the substrate to form a trench; epitaxially growing a second semiconductor mate...