US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "FeRAM with laminated ferroelectric film and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,631, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FeRAM with laminated ferroelectric film and method forming same" was invented by Bi-Shen Lee (Hsinchu, Taiwan), Yi Yang Wei (Hsinchu, Taiwan), Hsing-Lien Lin (Hsinchu, Taiwan), Hsun-Chung Kuang (Hsinchu, Taiwan), Cheng-Yuan Tsai (Chu-Pei, Taiwan) and Hai-Dang Trinh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a bottom electrode layer, and depositing a first ferroelectric layer over the bottom electrode layer. The first ferroelectric layer is amorphous. A second ferroelectric layer is deposited over the fi...