US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Epitaxial structures for fin-like field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,647, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Epitaxial structures for fin-like field effect transistors" was invented by Chia-Ta Yu (New Taipei, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan), Yen-Ming Chen (Hsin-Chu County, Taiwan) and Sai-Hooi Yeong (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first fin and a second fin protruding from a substrate, isolation features over the substrate to separate the first and the second fins, where a top surface of each of the first and the second fins is b...