US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Electron migration control in interconnect structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,907, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd..

"Electron migration control in interconnect structures" was invented by Chun-Jen Chen (Hsinchu, Taiwan), Kai-Shiung Hsu (Hsinchu, Taiwan), Ding-I Liu (Hsinchu, Taiwan) and Jyh-Nan Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for improving reliability of interconnect structures for semiconductor devices is disclosed. The method includes forming a contact structure on a transistor and forming a metallization layer on the contact structure. The forming the metallization layer includes depositing an inter-metal dielectric (IMD) layer on the...