US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Dual gate biologically sensitive field effect transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,352,724, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dual gate biologically sensitive field effect transistor" was invented by Yu-Jie Huang (Kaohsiung, Taiwan), Jui-Cheng Huang (Hsinchu, Taiwan) and Cheng-Hsiang Hsieh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate ...