US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Dimension variations in semiconductor devices and method for manufacturing same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,708, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Dimension variations in semiconductor devices and method for manufacturing same" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate structure of a first gate pitch, a first channel region under the first gate electrode, a first source/drain (S/D) feature contacting the first channel region and having a first S/D depth. The second transistor includes a second gate structure of a f...