ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,750, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Deep trench isolation for cross-talk reduction" was invented by Cheng Yu Huang (Hsinchu, Taiwan), Wei-Chieh Chiang (Yuanlin Township, Taiwan), Keng-Yu Chou (Kaohsiung, Taiwan), Chun-Hao Chuang (Hsinchu, Taiwan), Wen-Hau Wu (New Taipei, Taiwan) and Chih-Kung Chang (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of t...