US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Deep trench capacitor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,636, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Deep trench capacitor structure and method for forming the same" was invented by Fu-Chiang Kuo (Hsinchu, Taiwan), Yu-Han Chen (Yilan County, Taiwan) and Cheng-Wei Lo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first-type deep trenches and second-type deep trenches in a substrate, in which the first-type deep trenches have a first lengthwise direction along a first direction and the second-type deep trenches have a second lengthwise direction along a second direction; forming a capacitor structure ove...