US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Asymmetric source/drain for backside source contact" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,662, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Asymmetric source/drain for backside source contact" was invented by Feng-Ching Chu (Pingtung County, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin stack, a gate structure on the fin stack, a source region on a first side of the gate structure, a drain region on a second side of the gate structure opposite the first side, and a source contact extending to and connecting the source region. The source region and the drain region a...