US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Amorphous layers for reducing copper diffusion and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,908, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Amorphous layers for reducing copper diffusion and method forming same" was invented by Jyh-Nan Lin (Hsinchu, Taiwan), Chia-Yu Wu (Hsinchu, Taiwan), Kai-Shiung Hsu (Hsinchu, Taiwan) and Ding-I Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend...