ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,386, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. LTD (Hsinchu, Taiwan).
"Variable voltage bit line precharge" was invented by Atul Katoch (Kanata, Canada) and Adrian Earle (Ontario, Canada).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells, a bit line connected to the memory cells, and a power supply voltage input terminal configured to receive a power supply voltage at a first voltage level to operate the memory cells at the first voltage level. A bit line precharge circuit has an input terminal configured to receive the power supply voltage at the first voltage level, and ...