US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Transparent refraction structure for an image sensor and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,402, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transparent refraction structure for an image sensor and methods of forming the same" was invented by Ming-Shiang Lin (Hsinchu, Taiwan), Yun-Hao Chen (Hsinchu, Taiwan), Kuo-Yu Wu (Zhubei, Taiwan) and Tse-Hua Lu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plurality of photovoltaic junctions for a subpixel may be formed in a semiconductor substrate. After thinning the backside of the semiconductor substrate, at least one transparent refraction structure may be formed on the backside surface of the thinned semiconductor substrate...