US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Threshold voltage tuning for fin-based integrated circuit device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,367, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Threshold voltage tuning for fin-based integrated circuit device" was invented by Chung-Liang Cheng (Changhua County, Taiwan), Wei-Jen Chen (Taichung, Taiwan), Yen-Yu Chen (Taichung, Taiwan) and Ming-Hsien Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for tuning threshold voltages of fin-like field effect transistor (FinFET) devices are disclosed herein. An exemplary integrated circuit device includes a high voltage n-type FinFET, a high voltage p-type FinFET, a low voltage n-type FinFET, and a low voltage p-type FinF...