ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,311, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan), Chia-En Huang (Hsinchu County, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a semiconductor device and manufacturing methods for forming the memor...