US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "System and method for dynamically adjusting thin-film deposition parameters" (Taiwanese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,371,791, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"System and method for dynamically adjusting thin-film deposition parameters" was invented by Chung-Liang Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin-film deposition and method deposits thin films on semiconductor wafers. The thin-film deposition utilizes an analysis model that dynamically selects process conditions for a next deposition process by receiving static process conditions and target thin-film data. The analysis model identifies dynamic process conditions data that, together with the static process condit...