ALEXANDRIA, Va., July 30 -- United States Patent no. 12,372,880, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"System and method for detecting debris in a photolithography system" was invented by Shang-Chieh Chien (Hsinchu, Taiwan), Tzu-Jung Pan (Hsinchu, Taiwan), Wei-Shin Cheng (Hsinchu, Taiwan), Cheng Hung Tsai (Hsinchu, Taiwan), Li-Jui Chen (Hsinchu, Taiwan) and Heng-Hsin Liu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned wit...