ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,391, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Static random access memory with write assist adjustment" was invented by Kian-Long Lim (East District, Taiwan) and Chia-Hao Pao (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes embodiments of a write assist circuit. The write assist circuit can include a boost circuit configured to output a first negative voltage at a first output terminal, and an adjustment circuit configured to couple the first negative voltage to a second negative voltage higher than the first negative voltage. The adjustment c...