US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "SRAM cells with vertical gate-all-round MOSFETs" (Taiwanese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,390, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"SRAM cells with vertical gate-all-round MOSFETs" was invented by Jhon Jhy Liaw (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Static Random Access Memory (SRAM) cell includes a first boundary and a second boundary opposite to, and parallel to, the first boundary, a first and a second pull-up transistor, a first and a second pull-down transistor forming cross-latched inverters with the first and the second pull-up transistors, and a first and a second pass-gate transistor. Each of the first and the second pull-up transis...