ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,360, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Silicide backside contact" was invented by Chen-Hung Tsai (Kaohsiung, Taiwan), Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a silicide feature disposed in the backside die...