ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,399, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor memory devices with wrapped word lines" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Xinfeng, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first memory cell. The first memory cell includes: a first conductor structure extending along a lateral direction; a first memory film comprising a first portion wrapping around a first portion of the first conductor structure; and a first semiconductor film wrapping around the first portion of the first memory film. A second conductor stru...