US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Semiconductor devices with edge dielectric fin structures and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,374, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices with edge dielectric fin structures and methods of manufacturing thereof" was invented by Shih-Yao Lin (New Taipei, Taiwan), Chen-Ping Chen (Toucheng Township, Taiwan), Chieh-Ning Feng (Taichung, Taiwan), Hsiao Wen Lee (Hsinchu, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first, second, third, fourth, fifth, and sixth fin structure. The second fin structure is separated from each of the first and third fin structures by a first distance, the fifth fin st...