ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,356, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices with backside power rail and methods of fabrication thereof" was invented by Chun-Yuan Chen (Hsinchu, Taiwan), Pei-Yu Wang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in conta...