US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Semiconductor devices having a dielectric embedded in source and/or drain" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,329, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices having a dielectric embedded in source and/or drain" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Xinfeng, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, comprises a source structure comprising an active source portion, an inactive source portion spaced apart from the active source portion in a vertical direction, and a first dielectric structure interposed between the active source portion and the inactive source portion. A drain structure is spaced apart from the source st...