ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,358, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor devices and methods of manufacturing thereof" was invented by Tzu Ang Chiang (Hsinchu, Taiwan), Chun-Neng Lin (Hsinchu, Taiwan), Jian-Jou Lian (Hsinchu, Taiwan), Chieh-Wei Chen (Taoyuan, Taiwan), Ming-Hsi Yeh (Hsinchu, Taiwan) and Po-Yuan Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming at least one fin on a substrate, a plurality of dummy gates over the at least one fin, and a sidewall spacer on the dummy gates. Source and drain regions are epitaxial...