ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,624, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor devices" was invented by Pei-Yu Wang (Hsinchu, Taiwan) and Yu-Xuan Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a first fin; a gate structure over the first fin; a first source/drain region adjacent the gate structure; an etch stop layer over the first source/drain region; a conductive line over the etch stop layer, the conductive line isolated from the first source/drain region by the etch stop layer, a top surface of the conductive line being coplanar with a top surface ...