US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Semiconductor device with silicide structures surrounding epitaxial structures and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,321, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with silicide structures surrounding epitaxial structures and method of making the same" was invented by Chen-Han Wang (Hsinchu, Taiwan), Keng-Chu Lin (Hsinchu, Taiwan) and Shuen-Shin Liang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a channel region, a gate structure, two epitaxial structures, and two silicide structures. The channel region is disposed on the semiconductor substrate. The gate structure is disposed on the semiconductor substrate...