US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Semiconductor device with nanostructures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,417, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with nanostructures" was invented by Hsin-Hsiang Tseng (Changhua County, Taiwan), Chih-Fei Lee (Tainan, Taiwan), Chia-Pin Cheng (Kaohsiung, Taiwan) and Fu-Cheng Chang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate, a light absorption region, and a nanostructure array. The light absorption region is over the substrate. The nanostructure array us over the light absorption region. ...