US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Semiconductor device structure with dielectric dummy gate and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,338, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure with dielectric dummy gate and method for forming the same" was invented by Sheng-Hsiung Wang (Zhubei, Taiwan) and Tung-Heng Hsieh (Zhudong Town, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The fin has a wide portion and a width-transition portion. The width-transition portion tapers away from the wide portion in a top view of the substrate, and a first top surface of ...