ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,348, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device structure and method for forming the same" was invented by Sai-Hooi Yeong (Zhubei, Taiwan), Chi-On Chui (Hsinchu, Taiwan) and Chien-Ning Yao (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a transistor which includes a source/drain feature adjoining an active region, and a gate stack over the active region. The semiconductor device structure further includes a capacitor above the transistor, the capacitor including a b...