ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,339, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device structure and method for forming the same" was invented by Po-Shao Lin (Taipei, Taiwan), Yi-Hsiu Liu (Taipei, Taiwan), Chih-Chung Chang (Mingjian Township, Nantou County, Taiwan), Chung-Ting Ko (Taipei, Taiwan) and Sung-En Lin (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The semiconductor device structure includes a first fin structure formed over a substrate, and the first fin structure includes a plurality of first nanostructures sta...